Integration of AlInGaAs-MQW Fabry–Pérot Lasers With Emission at Two Wavelength Ranges via Quantum-Well Intermixing

Author

Lee, Ko-Hsin ; Roycroft, Brendan ; O´Callaghan, James ; Daunt, Chris L L M ; Yang, Hua ; Song, Jeong Hwan ; Peters, Frank H. ; Corbett, Brian

Author_Institution

Tyndall Nat. Inst., Cork, Ireland

Volume

23

Issue

1

fYear

2011

Firstpage

27

Lastpage

29

Abstract

We demonstrate ridge waveguide lasers based on AlInGaAs multiple quantum wells emitting at 1434 and 1541 nm on the same laser bar using quantum-well intermixing with dielectric capping layers. The internal quantum efficiencies are measured to be 61% and 72% and the internal losses are 49 and 23 cm^-1 for lasers with intermixing promoted and inhibited, respectively. The characteristic temperatures are found to be approximately 50 K for lasers emitting around 1433 nm and 75 K for those emitting around 1541 nm.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical losses; quantum well lasers; waveguide lasers; AlInGaAs; Fabry-Perot lasers; characteristic temperatures; dielectric capping layers; efficiency 61 percent; efficiency 72 percent; internal losses; internal quantum efficiencies; quantum-well intermixing; ridge waveguide lasers; wavelength 1434 nm; wavelength 1541 nm; Measurement by laser beam; Photonic band gap; Photonics; Quantum well lasers; Temperature measurement; Waveguide lasers; Bandgap shift; integration; interdiffusion; quantum-well intermixing (QWI); semiconductor lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2010.2090344

Filename

5613917