Multilevel Programmable Oxide Diode for Cross-Point Memory by Electrical-Pulse-Induced Resistance Change

Author

Kim, Ki Hwan ; Kang, Bo Soo ; Lee, Myoung-Jae ; Ahn, Seung-Eon ; Lee, Chang Bum ; Stefanovich, Genrikh ; Xianyu, Wen Xu ; Kim, Chang Jung ; Park, Youngsoo

Author_Institution

Semicond. Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea

Volume

30

Issue

10

fYear

2009

Firstpage

1036

Lastpage

1038

Abstract

A multilevel one-time programmable (OTP) oxide diode for cross-point memory is introduced. The oxide diode is composed of a thin-film p-CuO/n-InZnOx (IZO). By applying negative electrical pulses, the p-CuO/n-IZO diode exhibited multilevel resistance states, and such characteristics of the p-CuO/n-IZO diode could be utilized as the cell of OTP cross-point memory. The resistance-change properties of the p-CuO/n-IZO diode originated possibly from a back-to-back diode phenomenon by oxygen ion migration in the IZO thin film.

Keywords

copper compounds; electric resistance; flash memories; indium compounds; p-n junctions; programmable circuits; semiconductor diodes; semiconductor thin films; thin film devices; zinc compounds; CuO-InZnO; back-to-back diode phenomenon; cross-point memory; electrical-pulse-induced resistance change; multilevel one-time programmable oxide diode; multilevel resistance states; negative electrical pulses; oxygen ion migration; thin-film diode; Cross-point; diode; memory; oxide;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2029247

Filename

5233829