Title :
The Layout Geometry Dependence of the Power Cells on Performances and Reliability
Author :
Wang, Ruey-Lue ; Liu, Chien-Hsuan ; Su, Yan-Kuin ; Tu, Chih-Ho ; Juang, Ying-Zong
Author_Institution :
Dept. of Electron. Eng., Nat. Kaohsiung Normal Univ., Kaohsiung, Taiwan
Abstract :
The performances and reliability of the NMOS power cells for power amplifiers (PA) were proposed. The performances of power cells with different layout geometries have been compared. The drain current degradation of the NMOS transistors due to hot-carrier effect and high RF power stresses induced by the load impedance mismatches was also present in this work. The load mismatch factors at fundamental, second-order, and third-order frequencies were analyzed to quantify the power mismatch. The cells were fabricated by a 0.18 μm CMOS process. All of the characteristics of the devices were measured at 5.2 GHz.
Keywords :
CMOS analogue integrated circuits; hot carriers; integrated circuit layout; integrated circuit reliability; microwave power amplifiers; power MOSFET; CMOS process; NMOS power cell reliability; NMOS transistors; PA; drain current degradation; frequency 5.2 GHz; high-RF power stresses; hot-carrier effect; layout geometry dependence; load impedance mismatches; power amplifiers; size 0.18 mum; Degradation; Hot carrier effects; Impedance; Power generation; Reliability; Stress; Hot-carrier effect; RF stress; load-pull system;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2085037
