Behavior model for series connected high voltage IGBTs

The tail current of insulation gate bipolar transistor (IGBT), which is difficult to describe accurately, influences the series connection characteristics of IGBTs remarkably. In this paper, the series connection characteristics of 6500V/600A high voltage IGBTs (HV-IGBTs) are analyzed, and a behavior model for series connected HV-IGBTs is proposed. The model is implemented in PSIM with switches, capacitances and control blocks. The currents of HV-IGBTs are described piecewise in this model. In order to reflect the series connection characteristics accurately, the tail current is compensated and the model parameters are extracted based on test results of series connected HV-IGBTs. The proposed model is applied to simulate the series connection characteristics of two HV-IGBTs with active clamping circuits. The comparison between simulation results and experiment results verify the validity and precision of the proposed model.