DocumentCode
1365785
Title
Photodetector Nonlinearities Due to Voltage-Dependent Responsivity
Author
Hastings, Alexander S. ; Tulchinsky, David A. ; Williams, Keith J.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
21
Issue
21
fYear
2009
Firstpage
1642
Lastpage
1644
Abstract
A newly quantified photodiode nonlinearity is derived from a previously known bias voltage-dependent responsivity. For an InGaAs p-i-n photodiode, measured harmonic distortion is shown to be dominated by this derived nonlinearity mechanism. It is also shown that electron ionization in the depletion region of the photodiode is the source of the voltage-dependent responsivity.
Keywords
III-V semiconductors; gallium arsenide; harmonic distortion; indium compounds; p-i-n photodiodes; photodetectors; InGaAs; bias voltage-dependent responsivity; depletion region; electron ionization; harmonic distortion measurement; p-i-n photodiode; photodetector nonlinearity mechanism; Harmonic distortion; nonlinearity; photodiode; responsivity;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2009.2031165
Filename
5233890
Link To Document