DocumentCode :
1365785
Title :
Photodetector Nonlinearities Due to Voltage-Dependent Responsivity
Author :
Hastings, Alexander S. ; Tulchinsky, David A. ; Williams, Keith J.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
Volume :
21
Issue :
21
fYear :
2009
Firstpage :
1642
Lastpage :
1644
Abstract :
A newly quantified photodiode nonlinearity is derived from a previously known bias voltage-dependent responsivity. For an InGaAs p-i-n photodiode, measured harmonic distortion is shown to be dominated by this derived nonlinearity mechanism. It is also shown that electron ionization in the depletion region of the photodiode is the source of the voltage-dependent responsivity.
Keywords :
III-V semiconductors; gallium arsenide; harmonic distortion; indium compounds; p-i-n photodiodes; photodetectors; InGaAs; bias voltage-dependent responsivity; depletion region; electron ionization; harmonic distortion measurement; p-i-n photodiode; photodetector nonlinearity mechanism; Harmonic distortion; nonlinearity; photodiode; responsivity;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2031165
Filename :
5233890
Link To Document :
بازگشت