Challenges and trends of high power IGBT module packaging

Author

Wang, Yannan ; Wu, Yaowu ; Jones, Simon ; Dai, Xiaoyu ; Liu, Guo-Ping

Author_Institution

Dynex Semicond. Ltd., Lincoln, UK

fYear

2014

fDate

Aug. 31 2014-Sept. 3 2014

Firstpage

1

Lastpage

7

Abstract

Insulated gate bipolar transistor (IGBT) modules play an important role in many power systems, in which the performance and reliability are limiting factors to system application. Therefore, intensive investigation has been done on the packaging as it affects IGBT module characteristics. In this paper, the status, challenges and trends of packaging technologies for high power traction and industrial drive IGBT modules are discussed. It is suggested that the advanced joining and interconnection technologies for the future power module assembly will improve the module performance and reliability significantly.

Keywords

insulated gate bipolar transistors; power bipolar transistors; semiconductor device packaging; semiconductor device reliability; high power IGBT module packaging; industrial drive IGBT modules; insulated gate bipolar transistor; power module assembly; Bonding; Copper; Insulated gate bipolar transistors; Packaging; Reliability; Substrates; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo

Conference_Location

Beijing

Print_ISBN

978-1-4799-4240-4

Type

conf

DOI

10.1109/ITEC-AP.2014.6940851

Filename

6940851