Title :
Powerless XOR gate based on ambipolar CNT transistors
Author :
Sharifi, M.J. ; Ghasemi, Saleh
Author_Institution :
Electr. & Comput. Fac., Shahid Beheshti Univ., Tehran, Iran
Abstract :
Undoped SBCNTFETs have a unique characteristic in that they can automatically adjust themselves as p-type or n-type transistors based on the applied biases. Introduced is a new XOR gate based on the abovementioned feature for the first time and its correct function is shown using a new method and also by means of HSPICE simulation.
Keywords :
SPICE; carbon nanotubes; logic gates; transistors; HSPICE simulation; ambipolar CNT transistor; n-type transistor; p-type transistor; powerless XOR gate; undoped SBCNTFET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2010.1901
