DocumentCode :
1365914
Title :
Polarization-Dependent Sidewall Light Diffraction of LEDs Surrounded by Nanorod Arrays
Author :
Pan, Kun-Mao ; Cheng, Yun-Wei ; Chen, Liang-Yi ; Huang, Ying-Yuan ; Ke, Min-Yung ; Chen, Cheng-Pin ; Wu, Yuh-Renn ; Huang, JianJang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume :
21
Issue :
22
fYear :
2009
Firstpage :
1683
Lastpage :
1685
Abstract :
The polarization behavior of the light-emitting diodes (LEDs) with nanorods surrounding the p-mesa is investigated. The nanorods were fabricated using a natural nanosphere lithography and are intended to diffract laterally propagated light. In the horizontal direction, s-polarized light is dominated since the injected carriers choose to fill up the lowest energy state in a direction parallel to the quantum-well layers. The p/s-polarized ratio starts to increase with the increase of radiated angles and eventually saturates. Since the Bragg diffraction of laterally propagated p-polarized mode by nanorods is more efficient than the s-polarized light, the p/s-ratio of the device with nanorods is higher than that without rods. The p/s-ratio of the LED with nanorods is 1.96 at 90deg, and is 1.52 when the integrating intensity between 0deg and 90deg is considered.
Keywords :
III-V semiconductors; gallium compounds; gold; indium compounds; integrated optics; light diffraction; light emitting diodes; light polarisation; magnesium; nanophotonics; nanostructured materials; nickel; optical arrays; semiconductor quantum wells; titanium; wide band gap semiconductors; Bragg diffraction; InGaN-GaN-GaN:Mg; LED polarization; Ni-Au; Ti-Au; injected carriers; integrating intensity; laterally propagated p-polarized mode; light emitting diodes; nanorod arrays; natural nanosphere lithography; p-mesa; p/s-polarized ratio; polarization-dependent sidewall light diffraction; quantum-well layers; s-polarized light; Diffraction; light-emitting diodes (LEDs); nanorods; polarization;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2031682
Filename :
5233909
Link To Document :
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