Author :
Su, C.Y. ; Chen, L.P. ; Chang, S.J. ; Huang, G.W. ; Ho, Y.P. ; Tseng, B.M. ; Lin, D.C. ; Lee, H.Y. ; Kuan, J.F. ; Deng, Y.M. ; Chen, C.L. ; Leu, L.Y. ; Wen, K.A. ; Chang, C.Y.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
The effects of different coplanar ground-signal-ground (GSG) probe pads on the noise figure characteristics of submicron MOSFETs are presented. Devices with top-level metal as probe pads shielded by grounded bottom-level metal possess the most appropriate probe pad structure for characterising the noise performance of MOSFETs. Equivalent circuits of the probe pads are used to explain the different noise behaviours
Keywords :
CMOS integrated circuits; MOSFET; electric noise measurement; equivalent circuits; integrated circuit measurement; integrated circuit noise; probes; semiconductor device measurement; semiconductor device noise; 0.35 micron; MOSFET noise performance; coplanar probe pad design; deep submicron CMOS; ground-signal-ground probe pads; grounded bottom-level metal shielding; grounded shielding; noise figure characteristics; probe pad equivalent circuits; submicron MOSFETs; substrate parasitic resistance; top-level metal probe pads;
