InGaAs quantum dot lasers with submilliamp thresholds and ultra-low threshold current density below room temperature

Author

Park, G. ; Shchekin, O.B. ; Huffaker, D.L. ; Deppe, D.G.

Author_Institution

Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA

Volume

36

Issue

15

fYear

2000

fDate

7/20/2000 12:00:00 AM

Firstpage

1283

Lastpage

1284

Abstract

Continuous-wave operation of InGaAs quantum dot lasers is studied. A very low threshold current of 460 μA is achieved at 200 K for a 5 μm×1170 μm oxide-confined stripe laser. For a larger stripe width of 11 μm, a threshold current density of 5.2A/cm² is demonstrated. The characteristic threshold temperature is -700 K in the temperature range of 14-200 K, and drops rapidly around room temperature

Keywords

III-V semiconductors; current density; gallium arsenide; indium compounds; laser beams; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor quantum dots; 1.3 mum; 11 mum; 1170 mum; 140 to 200 K; 200 K; 298 K; 460 muA; 5 mum; 5.2 A; 700 K; InGaAs; InGaAs quantum dot lasers; characteristic threshold temperature; continuous-wave operation; current density; oxide-confined stripe laser; room temperature; stripe width; submilliamp thresholds; temperature range; threshold current density; ultra-low threshold current density;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20000909

Filename

856207