Title :
Low threshold 650 nm band real refractive index-guided AlGaInP laser diodes with strain-compensated MQW active layer
Author :
Honda, S. ; Miyake, T. ; Ikegami, T. ; Yagi, K. ; Bessho, Y. ; Hiroyama, R. ; Shone, M. ; Sawada, M.
Author_Institution :
LED Div., Tottori Sanyo Electr. Co Ltd., Japan
fDate :
7/20/2000 12:00:00 AM
Abstract :
650 nm band real refractive index-guided AlGaInP laser diodes with a strain-compensated MQW active layer have been successfully fabricated. A threshold current of 9 mA, which is the lowest ever reported was achieved and 5 mW operation was obtained up to 120°C. These lasers have been operated for >3000 h under 5 mW at 90°C
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; laser beams; optical fabrication; quantum well lasers; refractive index; 120 C; 3000 h; 5 mW; 650 nm; 9 mA; 90 C; AlGaInP; AlGaInP laser diodes; MQW active layer; fabrication; laser diodes; laser operation; low threshold refractive index-guided laser diodes; refractive index; refractive index-guided laser diodes; strain-compensated MQW active layer; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000907
