Title :
Low-threshold InGaAlAs/lnP vertical-cavity surface-emitting laser diodes for 1.8 μm wavelength range
Author :
Shau, R. ; Ortsiefer, M. ; Zigldrum, M. ; Rosskopf, J. ; Böhm, G. ; Köhler, F. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Munchen Univ., Germany
fDate :
7/20/2000 12:00:00 AM
Abstract :
The buried tunnel junction (BTJ) technique has successfully been used to realise the first electrically pumped 1.83 μm vertical-cavity surface-emitting lasers. Excellent CW performance with submilliamp threshold currents, differential quantum efficiencies up to 26% and single-mode operation has been achieved
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser cavity resonators; laser modes; quantum well lasers; semiconductor lasers; surface emitting lasers; 1.8 mum; 1.83 mum; 26 percent; CW performance; InGaAlAs-InP; InGaAlAs/lnP vertical-cavity surface-emitting laser diodes; buried tunnel junction technique; differential quantum efficiencies; electrically pumped vertical-cavity surface-emitting lasers; laser diodes; low-threshold VCSEL diodes; single-mode operation; submilliamp threshold currents; vertical-cavity surface-emitting laser diodes; wavelength range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20000934
