DocumentCode
1366074
Title
A closed form analytical model for the electrical properties of microstrip interconnects
Author
Bogatin, Eric
Author_Institution
Xinix Inc., Santa Clara, CA, USA
Volume
13
Issue
2
fYear
1990
fDate
6/1/1990 12:00:00 AM
Firstpage
258
Lastpage
266
Abstract
A simple model is presented based on closed-form analytical approximations for the resistance, capacitance, inductance, and conductance of a generic microstrip interconnect. Working in the frequency domain, all the low-frequency lumped circuit and high-frequency transmission line properties can be calculated. As examples, this model is applied to high-frequency reflectivity measurements on Teflon and FR4 printed circuit board microstrips. Agreement to better than 5% up to 1 GHz is obtained by using a dielectric constant of 2.20 and dissipation factor of 0.004 for the Teflon boards and a dielectric constant of 4.9 at 1 MHz with a constant dissipation factor of 0.022 for the FR4 microstrips. This model enables packaging engineers to evaluate the possibilities of an interconnect technology very simply on their personal computers (PCs)
Keywords
circuit CAD; glass fibre reinforced plastics; polymers; printed circuit design; strip lines; transmission line theory; 1 MHz to 1 GHz; FR4 PCBs; FR4 microstrips; Teflon PCBs; Teflon boards; capacitance; closed form analytical model; conductance; dielectric constant; dissipation factor; electrical properties; frequency domain; high-frequency reflectivity measurements; high-frequency transmission line properties; inductance; interconnect technology; low-frequency lumped circuit; microstrip interconnects; packaging engineers; permittivity; personal computers; printed circuit board microstrips; resistance; Analytical models; Capacitance; Dielectric constant; Distributed parameter circuits; Electric resistance; Frequency domain analysis; Inductance; Integrated circuit interconnections; Microstrip; Reflectivity;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/33.56155
Filename
56155
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