DocumentCode :
1366075
Title :
High detectivity GaInAsSb pin infrared photodetector for blood glucose sensing
Author :
Carter, B.L. ; Shaw, E. ; Olesberg, J.T. ; Chan, W.K. ; Hasenberg, T.C. ; Flatte, M.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Iowa Univ., Iowa City, IA, USA
Volume :
36
Issue :
15
fYear :
2000
fDate :
7/20/2000 12:00:00 AM
Firstpage :
1301
Lastpage :
1303
Abstract :
A molecular beam epitaxy grown GaInAsSb pin photodetector lattice matched to a GaSb substrate is reported. The mesa type detector has high responsivity in the 1.4 to 2.4 μm wavelength range with -0.3 V bias, 40 μA dark current for a 1 mm diameter detector and the highest detectivity D* of 2.6×1010 cm·Hz1/2/W reported for a GaInAsSb detector. The measured responsivity compares well with k·p calculations
Keywords :
biosensors; blood; chemical sensors; dark conductivity; gallium arsenide; gallium compounds; indium compounds; infrared detectors; molecular beam epitaxial growth; p-i-n photodiodes; semiconductor epitaxial layers; semiconductor growth; -0.3 V; 1.4 to 2.4 micrometre; 40 muA; GaInAsSb; blood glucose sensing; dark current; mesa type detector; molecular beam epitaxy growth; pin infrared photodetector; responsivity;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20000956
Filename :
856221
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1366075
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