• DocumentCode
    1366075
  • Title

    High detectivity GaInAsSb pin infrared photodetector for blood glucose sensing

  • Author

    Carter, B.L. ; Shaw, E. ; Olesberg, J.T. ; Chan, W.K. ; Hasenberg, T.C. ; Flatte, M.E.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Iowa Univ., Iowa City, IA, USA
  • Volume
    36
  • Issue
    15
  • fYear
    2000
  • fDate
    7/20/2000 12:00:00 AM
  • Firstpage
    1301
  • Lastpage
    1303
  • Abstract
    A molecular beam epitaxy grown GaInAsSb pin photodetector lattice matched to a GaSb substrate is reported. The mesa type detector has high responsivity in the 1.4 to 2.4 μm wavelength range with -0.3 V bias, 40 μA dark current for a 1 mm diameter detector and the highest detectivity D* of 2.6×1010 cm·Hz1/2/W reported for a GaInAsSb detector. The measured responsivity compares well with k·p calculations
  • Keywords
    biosensors; blood; chemical sensors; dark conductivity; gallium arsenide; gallium compounds; indium compounds; infrared detectors; molecular beam epitaxial growth; p-i-n photodiodes; semiconductor epitaxial layers; semiconductor growth; -0.3 V; 1.4 to 2.4 micrometre; 40 muA; GaInAsSb; blood glucose sensing; dark current; mesa type detector; molecular beam epitaxy growth; pin infrared photodetector; responsivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20000956
  • Filename
    856221
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1366075