DocumentCode
1366194
Title
Electro-optical modulators using novel buried waveguides in GaInAsP/InP material
Author
Bourbin, Y. ; Enard, A. ; Blondeau, R. ; Razeghi, M. ; Rondi, D. ; Papuchon, M. ; de Cremoux, B.
Author_Institution
Thomson-CSF/LCR, Orsay
Volume
24
Issue
4
fYear
1988
fDate
2/18/1988 12:00:00 AM
Firstpage
221
Lastpage
223
Abstract
Losses as low as 0.4±0.2 dB/cm and electro-optical modulation efficiencies as high as 5°/V/mm have been obtained in single mode waveguides employing a novel buried structure in GaInAsP/InP grown by LPMOCVD and processed by selective chemical etching. Such modulators are potentially excellent candidates for integrated optoelectronics
Keywords
III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; optical losses; optical modulation; optical waveguide components; vapour phase epitaxial growth; GaInAsP-InP; III-V semiconductors; LPMOCVD; buried waveguides; electro-optical modulation; integrated optics; integrated optoelectronics; low pressure MOCVD; modulation efficiency; propagation losses; selective chemical etching; single mode waveguides;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
5617
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