Title :
Electro-optical modulators using novel buried waveguides in GaInAsP/InP material
Author :
Bourbin, Y. ; Enard, A. ; Blondeau, R. ; Razeghi, M. ; Rondi, D. ; Papuchon, M. ; de Cremoux, B.
Author_Institution :
Thomson-CSF/LCR, Orsay
fDate :
2/18/1988 12:00:00 AM
Abstract :
Losses as low as 0.4±0.2 dB/cm and electro-optical modulation efficiencies as high as 5°/V/mm have been obtained in single mode waveguides employing a novel buried structure in GaInAsP/InP grown by LPMOCVD and processed by selective chemical etching. Such modulators are potentially excellent candidates for integrated optoelectronics
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; optical losses; optical modulation; optical waveguide components; vapour phase epitaxial growth; GaInAsP-InP; III-V semiconductors; LPMOCVD; buried waveguides; electro-optical modulation; integrated optics; integrated optoelectronics; low pressure MOCVD; modulation efficiency; propagation losses; selective chemical etching; single mode waveguides;
Journal_Title :
Electronics Letters
