Title :
Design optimization and testing of a GaAs switched-capacitor filter
Author :
Haigh, David G. ; Toumazou, Chris ; Harrold, Stephen J. ; Steptoe, K. ; Sewell, John I. ; Bayruns, Robert
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. Coll., London, UK
fDate :
8/1/1991 12:00:00 AM
Abstract :
The design of GaAs MESFET technology is discussed. The design techniques developed are illustrated by means of a second-order switched-capacitor bandpass filter designed to operate at a switching frequency of 500 MHz. The design incorporates an operational amplifier architecture with a simulated gain of 60 dB and a switch driver circuit. Amplifiers are characterized in terms of settling time performance, and a general procedure for optimization of the switched-capacitor circuit to maximize switching frequency is presented. Measurements on a fabricated chip confirm the design of the filter and its components
Keywords :
III-V semiconductors; Schottky gate field effect transistors; band-pass filters; field effect integrated circuits; gallium arsenide; operational amplifiers; switched capacitor filters; 500 MHz; 60 dB; GaAs; MESFET technology; gain; operational amplifier architecture; second order filters; semiconductors; settling time; switch driver circuit; switching frequency; Band pass filters; Circuit simulation; Design optimization; Gain; Gallium arsenide; MESFETs; Operational amplifiers; Switches; Switching frequency; Testing;
Journal_Title :
Circuits and Systems, IEEE Transactions on
