Parallel-gap welding to very-thin metallization for high temperature microelectronic interconnects

Author

Fendrock, John J. ; Hong, Lazaro M.

Author_Institution

Vitarel Microelectron. Inc., San Diego, CA, USA

Volume

13

Issue

2

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

376

Lastpage

382

Abstract

The application of parallel-gap welding for bonding 5-mil annealed Pt wire to a 5000-Å Pt pad (with an underlying base of Ti, Mo, and W) sputter deposited on a sapphire substrate has been systematically examined. Optimum bonding parameters-force, voltage, duration, gap, and electrode width-have been developed for Cu-Cr and Mo-carbide electrodes which attain bond pull strengths approaching the tensile strength of the Pt wire without sapphire substrate microcracking. The Mo-carbide electrodes produced stronger bonds with less oxidation and pitting, and exhibited less electrode-wire adhesion than the Cu-Cr electrodes

Keywords

lead bonding; metallisation; welding; 5 mil; 5000 Å; Cu-Cr electrodes; Pt-Pt; bond pull strengths; bonding parameters; electrode width; electrode-wire adhesion; high temperature microelectronic interconnects; oxidation; parallel-gap welding; pitting; sapphire substrate; substrate microcracking; tensile strength; very-thin metallization; Bonding forces; Electrodes; Gold; Integrated circuit interconnections; Metallization; Microelectronics; Temperature; Voltage; Welding; Wire;

fLanguage

English

Journal_Title

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on

Publisher

ieee

ISSN

0148-6411

Type

jour

DOI

10.1109/33.56171

Filename

56171