Zero Temperature Coefficient Bias in MOS Devices. Dependence on Interface Traps Density, Application to MOS Dosimetry

Author

Carbonetto, Sebastián H. ; Inza, Mariano A García ; Lipovetzky, José ; Redin, Eduardo G. ; Salomone, Lucas Sambuco ; Faigón, Adrián

Author_Institution

Dept. de Fis., Univ. de Buenos Aires, Buenos Aires, Argentina

Volume

58

Issue

6

fYear

2011

Firstpage

3348

Lastpage

3353

Abstract

In this paper the influence of temperature fluctuations on the response of thick gate oxide metal oxide semiconductor dosimeters is reviewed and the zero temperature coefficient (ZTC) method is evaluated for error compensation. The response of the ZTC current to irradiation is studied showing that the error compensation impoverishes with absorbed dose. Finally, an explanation and analytic expression for the shifts in the ZTC current with irradiation based on the interface traps creation is proposed and verified with experimental data.

Keywords

MIS devices; dosimeters; dosimetry; radiation effects; semiconductor counters; MOS devices; MOS dosimetry; ZTC current; ZTC method; ionizing radiation sensors; radiation effects; semiconductor dosimeters; temperature fluctuations; zero temperature coefficient; Dosimetry; Error compensation; Ionizing radiation sensors; MOS devices; Radiation effects; Temperature; Temperature measurement; Dosimetry; MOS devices; ionizing radiation sensors; radiation effects; temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2011.2170430

Filename

6065778