Title :
Defect Reduction in ArF Immersion Lithography Using Particle Trap Wafers With CVD Thin Films
Author :
Matsui, Yoshinori ; Onoda, Naka ; Nagahara, Seiji ; Uchiyama, Takayuki
Author_Institution :
Process Technol. Div., NEC Electron. Corp., Sagamihara, Japan
Abstract :
Particle trap wafers were applied to ArF immersion lithography to reduce the immersion-related defectivity. Interfacial free energy (gammaA-particle) and work of adhesion (WA-particle) between particle trap wafers and particles in immersion water explain the potential of trapping particles by the particle trap wafers. It was found that the treated SiCN chemical vapor deposition wafer performed well as a particle trap wafer and can help defect reduction in immersion lithography.
Keywords :
CVD coatings; adhesion; carbon compounds; cleaning; free energy; immersion lithography; silicon compounds; surface energy; ArF immersion lithography; CVD thin films; SiCN; adhesion; chemical vapor deposition wafer; cleaning wafer; defect reduction; interfacial free energy; particle trap wafers; ArF Immersion lithography; cleaning wafer; defect; particle;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2009.2031760
