Title :
SPICE modeling of the transient response of irradiated MOSFETs
Author :
Pouget, V. ; Lapuyade, H. ; Lewis, D. ; Deval, Y. ; Fouillat, P. ; Sarger, L.
Author_Institution :
IXL, Bordeaux I Univ., Talence, France
fDate :
6/1/2000 12:00:00 AM
Abstract :
A new SPICE model of irradiated MOSFET taking into account the real response of the four electrodes is proposed. A comparison between SPICE-generated transient response and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures
Keywords :
MOSFET; SPICE; radiation effects; semiconductor device models; transient response; MOSFET; PISCES simulation; SPICE model; irradiation; transient response; Calibration; Circuit simulation; Circuit testing; Computational modeling; Electrodes; MOSFETs; Numerical simulation; SPICE; Single event upset; Transient response;
Journal_Title :
Nuclear Science, IEEE Transactions on
