• DocumentCode
    1366545
  • Title

    SPICE modeling of the transient response of irradiated MOSFETs

  • Author

    Pouget, V. ; Lapuyade, H. ; Lewis, D. ; Deval, Y. ; Fouillat, P. ; Sarger, L.

  • Author_Institution
    IXL, Bordeaux I Univ., Talence, France
  • Volume
    47
  • Issue
    3
  • fYear
    2000
  • fDate
    6/1/2000 12:00:00 AM
  • Firstpage
    508
  • Lastpage
    513
  • Abstract
    A new SPICE model of irradiated MOSFET taking into account the real response of the four electrodes is proposed. A comparison between SPICE-generated transient response and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures
  • Keywords
    MOSFET; SPICE; radiation effects; semiconductor device models; transient response; MOSFET; PISCES simulation; SPICE model; irradiation; transient response; Calibration; Circuit simulation; Circuit testing; Computational modeling; Electrodes; MOSFETs; Numerical simulation; SPICE; Single event upset; Transient response;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.856472
  • Filename
    856472
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1366545