Title :
Modeling BJT radiation response with non-uniform energy distributions of interface traps
Author :
Barnaby, H.J. ; Cirba, C. ; Schrimpf, R.D. ; Kosier, S.L. ; Fouillat, P. ; Montagner, X.
Author_Institution :
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
fDate :
6/1/2000 12:00:00 AM
Abstract :
Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation
Keywords :
bipolar transistors; interface states; radiation effects; semiconductor device models; bipolar junction transistor; computer simulation; electrical characteristics; gated diode measurement; interface traps; model; nonuniform energy distribution; oxide defects; radiation response; Cathodes; Computational modeling; Computer simulation; Degradation; Diodes; Electric variables; Electric variables measurement; Ionizing radiation; Manufacturing processes; Monitoring;
Journal_Title :
Nuclear Science, IEEE Transactions on
