DocumentCode
1366551
Title
Modeling BJT radiation response with non-uniform energy distributions of interface traps
Author
Barnaby, H.J. ; Cirba, C. ; Schrimpf, R.D. ; Kosier, S.L. ; Fouillat, P. ; Montagner, X.
Author_Institution
Dept. of Electr. & Comput. Eng., Vanderbilt Univ., Nashville, TN, USA
Volume
47
Issue
3
fYear
2000
fDate
6/1/2000 12:00:00 AM
Firstpage
514
Lastpage
518
Abstract
Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation
Keywords
bipolar transistors; interface states; radiation effects; semiconductor device models; bipolar junction transistor; computer simulation; electrical characteristics; gated diode measurement; interface traps; model; nonuniform energy distribution; oxide defects; radiation response; Cathodes; Computational modeling; Computer simulation; Degradation; Diodes; Electric variables; Electric variables measurement; Ionizing radiation; Manufacturing processes; Monitoring;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.856473
Filename
856473
Link To Document