DocumentCode :
1366579
Title :
Novel design procedure of broad-band multilayer antireflection coatings for optical and optoelectronic devices
Author :
Lee, Jungkeun ; Tanaka, Toshiki ; Sasaki, Shoji ; Uchiyama, Seiji ; Tsuchiya, Masahiro ; Kamiya, Takeshi
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
Volume :
16
Issue :
5
fYear :
1998
fDate :
5/1/1998 12:00:00 AM
Firstpage :
884
Lastpage :
891
Abstract :
A novel design procedure of broad-band multilayer antireflection (AR) coatings for optical and optoelectronic devices is proposed. The design algorithm is based on the optical admittance detuning, with the bandwidth of finite reflectivity as a new merit function. Coating structures consist of only two materials with nonquarter-wave thicknesses. Numerical mappings on the four-layer structure showed four optimizing regions where an optimized four-layer AR coating on 1.55 μm GaInAs-AlGaInAs MQW semiconductor laser facet was predicted to have a broad bandwidth of 106 mm for a reflectivity of less than 10-5. TiO2 and SiO2 were electron-beam (EB) evaporated to form the four-layer AR coating on glass and InP substrates with an ion-beam assist and a real time in situ optical thickness monitor and experimentally verify its broad-band performance
Keywords :
III-V semiconductors; aluminium compounds; antireflection coatings; electron beam deposition; gallium arsenide; indium compounds; optical fabrication; optical films; optoelectronic devices; reflectivity; semiconductor lasers; 1.55 mum; GaInAs-AlGaInAs; GaInAs-AlGaInAs MQW semiconductor laser; InP; InP substrates; SiO2; TiO2; broad bandwidth; broad-band multilayer antireflection coatings; broad-band performance; coating structures; design algorithm; design procedure; electron-beam evaporated; finite reflectivity bandwidth; four-layer structure; ion-beam assist; merit function; nonquarter-wave thicknesses; numerical mappings; optical admittance detuning; optical device design; optimized four-layer AR coating; optimizing regions; optoelectronic devices; real time in situ optical thickness monitor; reflectivity; Admittance; Algorithm design and analysis; Bandwidth; Coatings; Nonhomogeneous media; Optical design; Optical devices; Optical materials; Optoelectronic devices; Reflectivity;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/50.669027
Filename :
669027
Link To Document :
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