Application of a pulsed laser for evaluation and optimization of SEU-hard designs [CMOS]

Author

McMorrow, Dale ; Melinger, Joseph S. ; Buchner, Stephen ; Scott, Thomas ; Brown, Ronald D. ; Haddad, Nadim F.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

47

Issue

3

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

559

Lastpage

565

Abstract

Pulsed laser single-event upset tests are used to pinpoint and characterize sensitive nodes of circuits and to provide feedback relevant to the development and optimization of radiation-hard designs. The results presented reveal the advantages of incorporating laser evaluation at an early stage into programs described for the development of radiation-hardened parts. A quantitative correlation is observed between the laser single-event upset and single-event latchup threshold measurements and those performed using accelerator-based heavy ion testing methods

Keywords

CMOS integrated circuits; integrated circuit testing; measurement by laser beam; radiation hardening (electronics); semiconductor device testing; SEU-hard designs; laser evaluation; latchup threshold measurements; pulsed laser; quantitative correlation; radiation-hard designs; single-event upset tests; Circuit testing; Design optimization; Laboratories; Laser feedback; Optical design; Optical pulses; Performance evaluation; Pulse circuits; Pulse measurements; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.856480

Filename

856480