Title :
Micro-irradiation experiments in MOS transistors using synchrotron radiation
Author :
Autran, J.-L. ; Masson, P. ; Freud, N. ; Raynaud, C. ; Rickel, C.
Author_Institution :
INSA de Lyon, Villeurbanne, France
fDate :
6/1/2000 12:00:00 AM
Abstract :
Spatially-resolved total-dose degradation has been performed in MOS transistors by focusing X-ray synchrotron radiation on the gate electrode with micrometer resolution. The influence of the resulting permanent degradation on device electrical properties has been analyzed using current-voltage and charge pumping measurements, in concert with optical characterization (photon emission) and quasi-breakdown measurements
Keywords :
MOSFET; X-ray effects; semiconductor device measurement; semiconductor device reliability; synchrotron radiation; MOS transistors; X-ray synchrotron radiation; charge pumping measurements; current-voltage measurements; electrical properties; gate electrode; micrometer resolution; optical characterization; quasi-breakdown measurements; spatially-resolved total-dose degradation; Charge measurement; Charge pumps; Current measurement; Degradation; Electric variables measurement; Electrodes; MOSFETs; Spatial resolution; Stimulated emission; Synchrotron radiation;
Journal_Title :
Nuclear Science, IEEE Transactions on
