Title :
Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform
Author :
Lv, Jianan ; Yang, Zhenchuan ; Yan, Guizhen ; Lin, Wenkui ; Cai, Yong ; Zhang, Baoshun ; Chen, Kevin J.
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Micro, Peking Univ., Beijing, China
Abstract :
In this letter, piezosensitive elements featuring large-size suspended gallium nitride (GaN) microstructures are fabricated with a two-step dry-release technique using the GaN-on-Si platform. The suspended microstructures are integrated with highly piezosensitive AlGaN/GaN heterostructures as sensing units to realize the GaN-based integrated microsensors. To characterize the residual-stress distribution of the fabricated microstructures, micro-Raman spectroscopy is employed. A microaccelerometer structure with a 250 times 250-mum2 proof-mass area is fabricated with the proposed fabrication technique, and the piezoresponse properties of the integrated sensing elements are characterized through bending experiment.
Keywords :
elemental semiconductors; gallium compounds; internal stresses; microfabrication; microsensors; silicon; AlGaN-GaN; GaN-Si; integrated microsensor; integrated sensing element; large-area suspended MEMS structure fabrication; microRaman spectroscopy; microaccelerometer structure; piezosensitive element; residual-stress distribution; suspended microstructures; two-step dry-release technique; Accelerometer; gallium nitride (GaN); microelectromechanical system (MEMS); piezosensitivity; sensor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2028905
