Fabrication of Large-Area Suspended MEMS Structures Using GaN-on-Si Platform

Author

Lv, Jianan ; Yang, Zhenchuan ; Yan, Guizhen ; Lin, Wenkui ; Cai, Yong ; Zhang, Baoshun ; Chen, Kevin J.

Author_Institution

Nat. Key Lab. of Sci. & Technol. on Micro, Peking Univ., Beijing, China

Volume

30

Issue

10

fYear

2009

Firstpage

1045

Lastpage

1047

Abstract

In this letter, piezosensitive elements featuring large-size suspended gallium nitride (GaN) microstructures are fabricated with a two-step dry-release technique using the GaN-on-Si platform. The suspended microstructures are integrated with highly piezosensitive AlGaN/GaN heterostructures as sensing units to realize the GaN-based integrated microsensors. To characterize the residual-stress distribution of the fabricated microstructures, micro-Raman spectroscopy is employed. A microaccelerometer structure with a 250 times 250-mum² proof-mass area is fabricated with the proposed fabrication technique, and the piezoresponse properties of the integrated sensing elements are characterized through bending experiment.

Keywords

elemental semiconductors; gallium compounds; internal stresses; microfabrication; microsensors; silicon; AlGaN-GaN; GaN-Si; integrated microsensor; integrated sensing element; large-area suspended MEMS structure fabrication; microRaman spectroscopy; microaccelerometer structure; piezosensitive element; residual-stress distribution; suspended microstructures; two-step dry-release technique; Accelerometer; gallium nitride (GaN); microelectromechanical system (MEMS); piezosensitivity; sensor;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2028905

Filename

5235124