Title :
Spatial and spectral oxide trap distributions in power MOSFETs
Author :
Torres, A. ; Flament, O. ; Marcandella, C. ; Musseau, O. ; Leray, J.L.
Author_Institution :
CEA/DAM, Bruyeres-Le-Chatel, France
fDate :
6/1/2000 12:00:00 AM
Abstract :
Charge trapping features of power MOSFET oxide are investigated by irradiation and post irradiation methods. We determine the spectral and the spatial trap distribution in the oxide of four hardened and unhardened devices. One unhardened device seems to present a trapping behavior close to the SIMOX buried oxide type
Keywords :
X-ray effects; hole traps; power MOSFET; radiation hardening (electronics); MOSFET oxide; hardened devices; hole traps; irradiation methods; post irradiation methods; power MOSFETs; spatial oxide trap distributions; spectral oxide trap distributions; trapping behavior; unhardened devices; Annealing; Electron traps; Frequency; Ionizing radiation; MOS devices; MOSFETs; Manufacturing; Radiation hardening; Temperature; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
