• DocumentCode
    1366629
  • Title

    Response of MOSFETs from DMILL technology to high total dose levels

  • Author

    Armani, J.M. ; Brisset, C. ; Joffre, F. ; Dentan, M.

  • Author_Institution
    LETI, CEA, Centre d´´Etudes Nucleaires de Saclay, Gif-sur-Yvette, France
  • Volume
    47
  • Issue
    3
  • fYear
    2000
  • fDate
    6/1/2000 12:00:00 AM
  • Firstpage
    592
  • Lastpage
    597
  • Abstract
    We have investigated the response of MOS transistors fabricated using the DMILL process and irradiated to a total dose of 1 MGy(Si) with a 60Co source. Results show that parameter shifts remain limited, thus authorizing use of this technology in environments involving very high levels of radiation
  • Keywords
    MOSFET; gamma-ray effects; 1 MGy; DMILL technology; MOSFET; gamma ray irradiation; radiation response; total dose; Accidents; Coolants; Electronics industry; Inductors; MOS devices; MOSFETs; Protection; Silicon on insulator technology; Testing; Voltage;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.856485
  • Filename
    856485
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1366629