DocumentCode
1366653
Title
Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)
Author
Ferlet-Cavrois, V. ; Paillet, D. ; Musseau, O. ; Leray, J.L. ; Faynot, O. ; Raynaud, C. ; Pelloie, J.L.
Author_Institution
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
Volume
47
Issue
3
fYear
2000
fDate
6/1/2000 12:00:00 AM
Firstpage
613
Lastpage
619
Abstract
The DTMOS architecture is particularly suited to very low supply voltage applications (0.6-1 V). This paper presents DTMOS devices processed with a partially depleted 0.25 μm SOI technology. It analyses their electrical behavior under total dose irradiation
Keywords
MOSFET; X-ray effects; low-power electronics; silicon-on-insulator; 0.25 micron; 0.6 to 1 V; DTMOS device; dynamic threshold voltage MOS transistor; electrical characteristics; low voltage operation; partially depleted SOI technology; total dose irradiation; CMOS technology; Circuits; Dielectric substrates; Isolation technology; Low voltage; MOS devices; MOSFETs; Silicon; Threshold voltage; Transistors;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.856488
Filename
856488
Link To Document