Title :
Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)
Author :
Ferlet-Cavrois, V. ; Paillet, D. ; Musseau, O. ; Leray, J.L. ; Faynot, O. ; Raynaud, C. ; Pelloie, J.L.
Author_Institution :
CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France
fDate :
6/1/2000 12:00:00 AM
Abstract :
The DTMOS architecture is particularly suited to very low supply voltage applications (0.6-1 V). This paper presents DTMOS devices processed with a partially depleted 0.25 μm SOI technology. It analyses their electrical behavior under total dose irradiation
Keywords :
MOSFET; X-ray effects; low-power electronics; silicon-on-insulator; 0.25 micron; 0.6 to 1 V; DTMOS device; dynamic threshold voltage MOS transistor; electrical characteristics; low voltage operation; partially depleted SOI technology; total dose irradiation; CMOS technology; Circuits; Dielectric substrates; Isolation technology; Low voltage; MOS devices; MOSFETs; Silicon; Threshold voltage; Transistors;
Journal_Title :
Nuclear Science, IEEE Transactions on
