DocumentCode
136667
Title
Finite Differential Method based Diode and IGBT model in PSPICE
Author
Puqi Ning ; Jinlei Meng ; Xuhui Wen
Author_Institution
Lab. of Power Electron. & Power Conversion, Inst. of Electr. Eng., Beijing, China
fYear
2014
fDate
Aug. 31 2014-Sept. 3 2014
Firstpage
1
Lastpage
5
Abstract
Other than the conventional Fourier model, the carrier diffusion equation which retains the distributed nature of charge dynamics in power bipolar devices can be solved by a fast Finite Differential Method in PSPICE. The paper presents the physical basis and the practical consideration of the new modeling approach of PiN Diode and IGBT. The models are also verified by simulations and experiments.
Keywords
SPICE; finite difference methods; insulated gate bipolar transistors; p-i-n diodes; power bipolar transistors; Fourier model; IGBT model; PSPICE; carrier diffusion equation; charge dynamics; fast finite differential method; physical basis; pin diode; power bipolar devices; Charge carrier processes; Equations; Insulated gate bipolar transistors; Integrated circuit modeling; Mathematical model; SPICE; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location
Beijing
Print_ISBN
978-1-4799-4240-4
Type
conf
DOI
10.1109/ITEC-AP.2014.6940938
Filename
6940938
Link To Document