Title :
Finite Differential Method based Diode and IGBT model in PSPICE
Author :
Puqi Ning ; Jinlei Meng ; Xuhui Wen
Author_Institution :
Lab. of Power Electron. & Power Conversion, Inst. of Electr. Eng., Beijing, China
fDate :
Aug. 31 2014-Sept. 3 2014
Abstract :
Other than the conventional Fourier model, the carrier diffusion equation which retains the distributed nature of charge dynamics in power bipolar devices can be solved by a fast Finite Differential Method in PSPICE. The paper presents the physical basis and the practical consideration of the new modeling approach of PiN Diode and IGBT. The models are also verified by simulations and experiments.
Keywords :
SPICE; finite difference methods; insulated gate bipolar transistors; p-i-n diodes; power bipolar transistors; Fourier model; IGBT model; PSPICE; carrier diffusion equation; charge dynamics; fast finite differential method; physical basis; pin diode; power bipolar devices; Charge carrier processes; Equations; Insulated gate bipolar transistors; Integrated circuit modeling; Mathematical model; SPICE; Semiconductor device modeling;
Conference_Titel :
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-4240-4
DOI :
10.1109/ITEC-AP.2014.6940938
