DocumentCode
1366698
Title
Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs
Author
Jaksic, A.B. ; Pejovic, M.M. ; Ristic, G.S.
Author_Institution
Fac. of Electron. Eng., Nis Univ., Serbia
Volume
47
Issue
3
fYear
2000
fDate
6/1/2000 12:00:00 AM
Firstpage
659
Lastpage
666
Abstract
Describes effects in two types of gamma-ray irradiated power VDMOSFETs, commercially available from different manufacturers. Isothermal annealing with constant and switching gate bias, as well as isochronal annealing have been performed. The application of charge-pumping measurements in commercial three-terminal VDMOSFETs is also discussed. Besides enabling insight into the post-irradiation response of investigated devices, obtained results point out some interesting post-irradiation phenomena
Keywords
annealing; gamma-ray effects; power MOSFET; semiconductor device measurement; charge-pumping measurements; constant gate bias; gamma-ray irradiation; isochronal annealing; isothermal annealing; post-irradiation response; power VDMOSFETs; switching gate bias; three-terminal devices; Annealing; Charge pumps; Current measurement; Isothermal processes; Power engineering and energy; Pulp manufacturing; Semiconductor device manufacture; Temperature; Thermal degradation; Threshold voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.856495
Filename
856495
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