Title :
Isothermal and isochronal annealing experiments on irradiated commercial power VDMOSFETs
Author :
Jaksic, A.B. ; Pejovic, M.M. ; Ristic, G.S.
Author_Institution :
Fac. of Electron. Eng., Nis Univ., Serbia
fDate :
6/1/2000 12:00:00 AM
Abstract :
Describes effects in two types of gamma-ray irradiated power VDMOSFETs, commercially available from different manufacturers. Isothermal annealing with constant and switching gate bias, as well as isochronal annealing have been performed. The application of charge-pumping measurements in commercial three-terminal VDMOSFETs is also discussed. Besides enabling insight into the post-irradiation response of investigated devices, obtained results point out some interesting post-irradiation phenomena
Keywords :
annealing; gamma-ray effects; power MOSFET; semiconductor device measurement; charge-pumping measurements; constant gate bias; gamma-ray irradiation; isochronal annealing; isothermal annealing; post-irradiation response; power VDMOSFETs; switching gate bias; three-terminal devices; Annealing; Charge pumps; Current measurement; Isothermal processes; Power engineering and energy; Pulp manufacturing; Semiconductor device manufacture; Temperature; Thermal degradation; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
