DocumentCode :
1366712
Title :
Proton damage in linear and digital optocouplers
Author :
Johnston, A.H. ; Rax, B.G.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume :
47
Issue :
3
fYear :
2000
fDate :
6/1/2000 12:00:00 AM
Firstpage :
675
Lastpage :
681
Abstract :
Fundamental differences in design influence the way that linear and digital optocouplers are degraded by radiation. Linear optocouplers are more affected by current drive conditions because the detector operates in a high-injection region when the LED produces normal light output, and do not have the extra operating margin that is inherent in digital optocouplers. Although LED degradation is often the dominant degradation mechanism in space environments, degradation of optocouplers with improved LEDs is limited by photoresponse degradation. Phototransistor gain has a relatively minor effect except at very high radiation levels
Keywords :
light emitting diodes; opto-isolators; proton effects; space vehicle electronics; LED degradation; current drive conditions; digital optocouplers; high-injection region; linear optocouplers; photoresponse degradation; phototransistor gain; proton damage; Degradation; Laboratories; Light emitting diodes; Manufacturing; Phototransistors; Photovoltaic cells; Propulsion; Protons; Radiation hardening; Space vehicles;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.856497
Filename :
856497
Link To Document :
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