Title :
AlGaInAs/InP Monolithically Integrated DFB Laser Array
Author :
Hou, Lianping ; Haji, Mohsin ; Akbar, Jehan ; Marsh, John H. ; Bryce, Ann Catrina
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Abstract :
The monolithic integration of four 1.50-μm range AlGaInAs/InP distributed feed-back lasers with a 4 × 1 multimode-interference optical combiner, a curved semiconductor optical amplifier and an electroabsorption modulator using relatively simple technologies-sidewall grating and quantum well intermixing-has been demonstrated. The four channels span the wavelength range of 1530-1566 nm and can operate separately or simultaneously. The epitaxial structure was designed to produce a far field pattern at the output waveguide facet, which is as small as 21.2°× 25.1°, producing a coupling efficiency with an angled-end single mode fiber at twice that of a conventional device design.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed feedback lasers; gallium compounds; indium compounds; semiconductor laser arrays; semiconductor optical amplifiers; AlGaInAs-InP; coupling efficiency; curved semiconductor optical amplifier; electroabsorption modulator; epitaxial structure; far field pattern; monolithically integrated distributed feedback lasers array; multimode-interference optical combiner; output waveguide facet; quantum well intermixing; sidewall grating; single mode fiber; wavelength 1.50 mum; wavelength 1530 nm to 1566 nm; Annealing; Couplings; Optical device fabrication; Optical waveguides; Photonic band gap; Semiconductor optical amplifiers; Waveguide lasers; Distributed feedback laser; quantum-well intermixing; semiconductor laser array; semiconductor optical amplifier; sidewall Bragg gratings;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2011.2174455
