Title :
Single event upsets in the dual-port-board SRAMs of the MPTB experiment
Author :
Barak, J. ; Barth, J.L. ; Seidleck, C.M. ; Marshall, C.J. ; Marshall, P.W. ; Carts, M.A. ; Reed, R.A.
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD, USA
fDate :
6/1/2000 12:00:00 AM
Abstract :
The in-flight data of SEUs in the devices of panels B and C of the MPTB experiments are presented. Ground test data for M65656 are used to calculate the SEU rates in this device using the calculated flux of ions along the orbit. The models used are CREME96, simple expressions derived here, and the figure of merit model. A very good agreement is found between these calculations and the observed rates
Keywords :
SRAM chips; ion beam effects; space vehicle electronics; CREME96 model; M65656; MPTB experiment; dual-port-board SRAM; figure of merit model; ground testing; ion irradiation; single event upset; space radiation environment; Belts; Extraterrestrial measurements; Orbital calculations; Protons; Random access memory; Satellites; Semiconductor device measurement; Single event transient; Single event upset; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
