Title :
A novel method of gate capacitances extraction for IGBT physical models
Author :
Jinlei Meng ; Puqi Ning ; Xuhui Wen
Author_Institution :
Univ. of Chinese Acad. of Sci., Beijing, China
fDate :
Aug. 31 2014-Sept. 3 2014
Abstract :
This paper presents a novel method for gate capacitances extraction of Insulated Gate Bipolar Transistor (IGBT). Gate capacitances are critical for IGBT physical models with accurate turn-on/off transient characteristics. The model is developed and expanded based on the conventional IGBT physical model, and the developed method can be obtained by several simple experiments. The presented method was verified by both IGBT datasheet and professional measurements, and can be used for gate capacitances extraction of Power Metal-Oxide- Semiconductor Field Effect Transistor (MOSFET) and Integrated Gate Commutated Thyristor (IGCT).
Keywords :
insulated gate bipolar transistors; power MOSFET; power bipolar transistors; semiconductor device models; thyristors; IGBT datasheet; IGBT physical models; IGCT; gate capacitances extraction method; insulated gate bipolar transistor; integrated gate commutated thyristor; power metal-oxide-semiconductor field effect transistor power MOSFET; turn-off transient characteristics; turn-on transient characteristics; Capacitance; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; MOSFET; Transient analysis; Insulated Gate Bipolar Transistor; gate capacitance; parameter extraction; physical models;
Conference_Titel :
Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-4240-4
DOI :
10.1109/ITEC-AP.2014.6940948
