A novel method of gate capacitances extraction for IGBT physical models

Author

Jinlei Meng ; Puqi Ning ; Xuhui Wen

Author_Institution

Univ. of Chinese Acad. of Sci., Beijing, China

fYear

2014

fDate

Aug. 31 2014-Sept. 3 2014

Firstpage

1

Lastpage

5

Abstract

This paper presents a novel method for gate capacitances extraction of Insulated Gate Bipolar Transistor (IGBT). Gate capacitances are critical for IGBT physical models with accurate turn-on/off transient characteristics. The model is developed and expanded based on the conventional IGBT physical model, and the developed method can be obtained by several simple experiments. The presented method was verified by both IGBT datasheet and professional measurements, and can be used for gate capacitances extraction of Power Metal-Oxide- Semiconductor Field Effect Transistor (MOSFET) and Integrated Gate Commutated Thyristor (IGCT).

Keywords

insulated gate bipolar transistors; power MOSFET; power bipolar transistors; semiconductor device models; thyristors; IGBT datasheet; IGBT physical models; IGCT; gate capacitances extraction method; insulated gate bipolar transistor; integrated gate commutated thyristor; power metal-oxide-semiconductor field effect transistor power MOSFET; turn-off transient characteristics; turn-on transient characteristics; Capacitance; Insulated gate bipolar transistors; Integrated circuit modeling; Logic gates; MOSFET; Transient analysis; Insulated Gate Bipolar Transistor; gate capacitance; parameter extraction; physical models;

fLanguage

English

Publisher

ieee

Conference_Titel

Transportation Electrification Asia-Pacific (ITEC Asia-Pacific), 2014 IEEE Conference and Expo

Conference_Location

Beijing

Print_ISBN

978-1-4799-4240-4

Type

conf

DOI

10.1109/ITEC-AP.2014.6940948

Filename

6940948