DocumentCode
1366818
Title
CdZnTe material uniformity and coplanar-grid gamma-ray detector performance
Author
Amman, M. ; Luke, P.N. ; Lee, J.S.
Author_Institution
Lawrence Berkeley Lab., CA, USA
Volume
47
Issue
3
fYear
2000
fDate
6/1/2000 12:00:00 AM
Firstpage
760
Lastpage
767
Abstract
“Electron-only” detection techniques such as the coplanar-grid method are effective in overcoming some of the charge transport problems of CdZnTe and, consequently, have led to large-volume gamma-ray detectors with good energy resolution while operating at room temperature. A requirement for the success of these techniques is uniformity in electron generation and transport. Once large inhomogeneities in these properties caused by grain boundaries and other large-scale crystal defects are eliminated through simple material screening techniques, small variations remain and limit the gamma-ray energy resolution. In this paper we present the results from our characterization and analysis of these nonuniformities in commercially available CdZnTe, and we establish the relationship between the nonuniformities and the ultimate coplanar-grid gamma-ray detector performance through experimental measurements
Keywords
II-VI semiconductors; cadmium compounds; gamma-ray detection; grain boundaries; semiconductor counters; CdZnTe; CdZnTe material uniformity; charge transport problems; coplanar-grid gamma-ray detector performance; crystal defects; electron generation; energy resolution; gamma-ray energy resolution; grain boundaries; large-volume gamma-ray detectors; Cathodes; Collimators; Crystalline materials; Electrons; Energy resolution; Gamma ray detection; Gamma ray detectors; Grain boundaries; Pulse generation; Pulse measurements;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.856511
Filename
856511
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