DocumentCode :
1366874
Title :
An Explicit Analytic Compact Model for Nanocrystalline Zinc Oxide Thin-Film Transistors
Author :
García-Sánchez, Francisco J. ; Ortiz-Conde, Adelmo
Author_Institution :
Solid State Electron. Lab., Univ. Simon Bolivar, Caracas, Venezuela
Volume :
59
Issue :
1
fYear :
2012
Firstpage :
46
Lastpage :
50
Abstract :
A new explicit model for long-channel nanocrystalline zinc oxide thin-film transistors is presented. The proposed equation is fully explicit by virtue of its use of the Lambert function. Consequently, the drain current can be directly calculated without the need of numerical iteration or approximations. Additionally, the proposed equation is analytically differentiable, allowing the straightforward derivation of explicit expressions for the transconductance and the output conductance of these devices.
Keywords :
nanostructured materials; thin film transistors; Lambert function; drain current; explicit analytic compact model; long-channel nanocrystalline zinc oxide thin-film transistor; output conductance; transconductance; Approximation methods; Equations; Logic gates; Mathematical model; Thin film transistors; Zinc oxide; Disordered semiconductors; MOSFET compact modeling; ZnO thin-film transistors (TFTs);
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2011.2170993
Filename :
6068238
Link To Document :
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