Title :
A Ka-Band Low Noise Amplifier Using Forward Combining Technique
Author :
Yu, Yueh-Hua ; Hsu, Wei-Hong ; Chen, Yi-Jan Emery
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This letter presents a wideband low noise amplifier (LNA) implemented in 0.15 μm InGaAs pHEMT technology. The forward combining technique is proposed to boost the amplifier gain at Ka band. Through gain enhancement, the noise characteristic of the amplifier can also be reduced. The Ka-band LNA exhibits a very wide 3 dB bandwidth from 29 to 44 GHz with the power gain of 14.2 dB. The measured noise figure varies between 2.0 and 3.3 dB from 26.5 to 40 GHz. The supply voltage of the circuit is 1.2 V and the power consumption is 38 mW. The overall chip size is 650 μm×720 μm.
Keywords :
circuit noise; high electron mobility transistors; low noise amplifiers; microwave amplifiers; millimetre wave amplifiers; wideband amplifiers; InGaAs; Ka-band low noise amplifier; LNA; amplifier gain; forward combining technique; frequency 26.5 GHz to 44 GHz; gain enhancement; noise figure; pHEMT technology; size 0.15 mum; voltage 1.2 V; wideband low noise amplifier; Indium gallium arsenide; Low-noise amplifiers; Noise measurement; PHEMTs; Semiconductor device measurement; Wideband; Feed forward; Ka band; low noise amplifier (LNA); pHEMT; wideband;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2010.2085425
