Title :
Infrared Pulsed Laser Deposition of Niobium Nitride Thin Films
Author :
Chaudhuri, Saumyadip S. ; Nevala, Minna R. ; Hakkarainen, Teemu ; Niemi, Tapio K. ; Maasilta, Ilari J.
Author_Institution :
Dept. of Phys., Univ. of Jyvaskyla, Jyväskyla, Finland
fDate :
6/1/2011 12:00:00 AM
Abstract :
We have successfully fabricated superconducting niobium nitride thin films on single crystals of magnesium oxide using a pulsed laser deposition technique where 1064 nm (photon energy ~1.16 eV) laser pulses from an Nd:YAG laser were used for ablation. A correlation between the superconducting transition temperature, the nitrogen base pressure during deposition and the lattice parameter of the produced NbN films was observed. Superconductor-insulator-normal metal junctions fabricated using these NbN films as the superconductor revealed nonlinear electrical characteristics at 4.2 K associated with quasiparticle tunneling.
Keywords :
electronic density of states; high-temperature superconductors; lattice constants; niobium compounds; pulsed laser deposition; quasiparticles; superconducting thin films; superconducting transition temperature; superconductive tunnelling; superconductor-normal-superconductor devices; MgO; NbN; Nd:YAG laser; ablation; electronic density-of-states; infrared pulsed laser deposition; lattice parameter; magnesium oxide single crystals; nitrogen base pressure; nonlinear electrical characteristics; photon energy; quasiparticle tunneling; superconducting niobium nitride thin films; superconducting transition temperature; superconductor-insulator-normal metal junctions; temperature 4.2 K; Crystals; Josephson junctions; Junctions; Laser ablation; Pulsed laser deposition; Semiconductor lasers; Superconducting photodetectors; Pulsed laser deposition; superconductivity; thin films; tunnel junctions;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2010.2081656
