Title :
Novel gate dielectric films formed by ion plating for low-temperature-processed polysilicon TFTs
Author :
Yeh, Ching-Fa ; Chen, Tai-Ju ; Fan, Ching-Lin ; Kao, Jiann-Shiun
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
A novel SiO/sub 2/ film formed by ion plating (IP) at room temperature was developed for low-temperature-processed (LTP) (<625/spl deg/C) polysilicon thin-film transistors (poly-Si TFT´s). The IP SiO/sub 2/ film is a high-density dielectric with strained bonds, and also a high-performance insulator with low-leakage current and high-breakdown voltage. Poly-Si TFT with IP SiO/sub 2/ as a gate insulator shows satisfactory performance.
Keywords :
characteristics measurement; dielectric thin films; elemental semiconductors; ion plating; leakage currents; silicon; silicon compounds; thin film transistors; 23 to 625 degC; Si-SiO/sub 2/; breakdown voltage; gate dielectric films; high-density dielectric; ion plating; leakage current; low-temperature-processing; polysilicon TFT; strained bonds; Argon; Dielectric films; Dielectric thin films; Dielectrics and electrical insulation; Etching; Liquid crystal displays; Optical films; Plasma temperature; Thin film transistors; Voltage;
Journal_Title :
Electron Device Letters, IEEE
