The MOS inversion layer as a minority carrier injector

In this paper we report the first experimental demonstration of the concept of MOS inversion layer injection (ILI). The new physical concept is based on the use of a MOS inversion layer as a minority carrier injector as part of a dynamic junction. The carrier injection of such a junction is entirely controlled by the MOS gate. Moreover, when the gate potential is reduced under the MOS threshold voltage, the junction collapses ensuring a very efficient turn-off mechanism. Based on this concept we propose two novel lateral three-terminal structures termed inversion layer diode (ILD) and inversion layer bipolar transistor (ILBT). The concept of inversion layer injection can be applied in power devices where effective MOS gate control of the active junctions is important.