Title :
Measured microwave power performance of AlGaN/GaN MODFET
Author :
Wu, Y.-F. ; Keller, B.P. ; Keller, S. ; Kapolnek, D. ; DenBaars, S.P. ; Mishra, U.K.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report the first microwave power measurement on GaN FET´s. At 2 GHz, a class A output power density of 1.1 W/mm with a power added efficiency of 18.6% was obtained on a 1 μm gate-length AlGaN/GaN MODFET. Mathematical simulation estimated that the transistor was operating at a channel temperature of 360/spl deg/C as a result of the poor thermal conductivity of the sapphire substrate. Despite this serious heating problem, the power output density still rivals GaAs MESFET´s.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; microwave field effect transistors; microwave measurement; microwave power transistors; power field effect transistors; power measurement; 1 micron; 18.6 percent; 2 GHz; 360 degC; AlGaN-GaN; III-V semiconductors; MODFET; channel temperature; class A output power density; heating problem; microwave power performance; power added efficiency; power measurement; power output density; sapphire substrate; thermal conductivity; Aluminum gallium nitride; Electromagnetic heating; FETs; Gallium nitride; HEMTs; MODFETs; Microwave measurements; Power generation; Power measurement; Thermal conductivity;
Journal_Title :
Electron Device Letters, IEEE
