• DocumentCode
    1367138
  • Title

    Tools for probing `atomic¿ action: Device designers need sophisticated ways to examine the advanced structures they have created

  • Author

    Gibson, J.M.

  • Author_Institution
    AT&T Bell Labs., Murray Hill, NJ, USA
  • Volume
    22
  • Issue
    12
  • fYear
    1985
  • Firstpage
    38
  • Lastpage
    44
  • Abstract
    The growth of thin films by vapor deposition, patterning by electron-beam lithography, and doping by low-energy ion implantation have opened the way to microelectronics on an incredibly fine scale. Newer microscopes that take advantage of the much lower wavelength associated with electrons are now available to build and study the new, minute electronic devices. The capabilities of the transmission electron microscope, the scanning transmission electron microscope, the scanning tunneling microscope, and the field ion microscope are surveyed. Problems posed by spherical aberration and by the need to stabilize the image are discussed. Attention is also given to the ability of high-resolution electron microscopes to provide information on interfaces.
  • Keywords
    aberrations; atomic structure; field emission electron microscopes; integrated circuit testing; scanning-transmission electron microscopes; transmission electron microscopes; tunnelling; doping; electron wavelengths; electron-beam lithography; field ion microscope; high-resolution electron microscopes; image stabilisation; interfaces; low-energy ion implantation; microelectronics; patterning; scanning transmission electron microscope; scanning tunneling microscope; spherical aberration; thin films; transmission electron microscope; vapor deposition; Image resolution; Lenses; Optical microscopy; Scanning electron microscopy; Transmission electron microscopy;
  • fLanguage
    English
  • Journal_Title
    Spectrum, IEEE
  • Publisher
    ieee
  • ISSN
    0018-9235
  • Type

    jour

  • DOI
    10.1109/MSPEC.1985.6370726
  • Filename
    6370726