Improvement of linewidth enhancement factor in 1.55-μm multiple-quantum-well laser diodes

Author

Choo, Heung Ro ; O, Beom-Hoan ; Park, Chong Dae ; Kim, Hyung Mun ; Kim, Jeong Soo ; Oh, Dae Kon ; Kim, Hong Man ; Pyun, Kwang Eui

Author_Institution

Opto-Electron. Sect., Electron. & Telecommun. Res. Inst., Taejon, South Korea

Volume

10

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

645

Lastpage

647

Abstract

The improvement of the linewidth enhancement factor in complex-coupled laser diode (CC-LD), or loss-coupled, was confirmed by measuring the spontaneous emission spectra below threshold from the sidewall of laser diodes. In addition, the serial resistance of the device was measured. The linewidth enhancement factor is improved by the presence of a light absorbing InGaAs grating for loss coupled distributed-feedback (DFB) laser diode (LD). We report the comparison of the linewidth enhancement factors of Fabry-Perot (FP) LD, conventional DFB-LD, and loss coupled DFB-LDs.

Keywords

III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser transitions; optical losses; quantum well lasers; spectral line breadth; spontaneous emission; Fabry-Perot laser diode; IR multiple-quantum-well laser diodes; InGaAs; InGaAs MQW lasers; below threshold; complex-coupled laser diode; laser diode sidewall; light absorbing InGaAs grating; linewidth enhancement factor; loss coupled DFB laser diode; loss-coupled; serial resistance; spontaneous emission spectra; Absorption; Chirp; Diode lasers; Electrical resistance measurement; Gratings; Indium gallium arsenide; Laser feedback; Optical coupling; Quantum well devices; Spontaneous emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.669225

Filename

669225