Title :
Improvement of linewidth enhancement factor in 1.55-μm multiple-quantum-well laser diodes
Author :
Choo, Heung Ro ; O, Beom-Hoan ; Park, Chong Dae ; Kim, Hyung Mun ; Kim, Jeong Soo ; Oh, Dae Kon ; Kim, Hong Man ; Pyun, Kwang Eui
Author_Institution :
Opto-Electron. Sect., Electron. & Telecommun. Res. Inst., Taejon, South Korea
fDate :
5/1/1998 12:00:00 AM
Abstract :
The improvement of the linewidth enhancement factor in complex-coupled laser diode (CC-LD), or loss-coupled, was confirmed by measuring the spontaneous emission spectra below threshold from the sidewall of laser diodes. In addition, the serial resistance of the device was measured. The linewidth enhancement factor is improved by the presence of a light absorbing InGaAs grating for loss coupled distributed-feedback (DFB) laser diode (LD). We report the comparison of the linewidth enhancement factors of Fabry-Perot (FP) LD, conventional DFB-LD, and loss coupled DFB-LDs.
Keywords :
III-V semiconductors; diffraction gratings; distributed feedback lasers; gallium arsenide; indium compounds; laser transitions; optical losses; quantum well lasers; spectral line breadth; spontaneous emission; Fabry-Perot laser diode; IR multiple-quantum-well laser diodes; InGaAs; InGaAs MQW lasers; below threshold; complex-coupled laser diode; laser diode sidewall; light absorbing InGaAs grating; linewidth enhancement factor; loss coupled DFB laser diode; loss-coupled; serial resistance; spontaneous emission spectra; Absorption; Chirp; Diode lasers; Electrical resistance measurement; Gratings; Indium gallium arsenide; Laser feedback; Optical coupling; Quantum well devices; Spontaneous emission;
Journal_Title :
Photonics Technology Letters, IEEE
