642-nm AlGaInP laser diodes with a triple tensile strain barrier cladding layer

Author

Chang, S.J. ; Chang, C.S.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

10

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

651

Lastpage

653

Abstract

For the first time, tensile strain barrier cladding (TSBC) layers were used in AlGaInP laser diodes (LDs). It was found that the TSBC layers can provide a better optical confinement and a better carrier confinement. AlGaInP LDs with and without the TSBC layers were both fabricated. It was found that the 48-mA threshold current of the 5 μm×800 μm gain-guided triple TSBC AlGaInP LD is lower than the 56-mA threshold current of the conventional AlGaInP LD with the same physical size. The characteristic temperature T₀ of the triple TSBC AlGaInP LD (i.e., 117 K) is also higher than the conventional AlGaInP LD (i.e., 99 K).

Keywords

Debye temperature; III-V semiconductors; aluminium compounds; claddings; deformation; gallium compounds; indium compounds; laser transitions; quantum well lasers; tensile strength; 48 mA; 5 mum; 642 nm; 642-nm AlGaInP laser diodes; 800 mum; AlGaInP; TSBC layers; carrier confinement; characteristic temperature; gain-guided triple TSBC AlGaInP LD; mA threshold current; optical confinement; triple tensile strain barrier cladding layer; Capacitive sensors; Carrier confinement; Crystalline materials; Diode lasers; Lattices; Optical materials; Quantum well devices; Temperature; Tensile strain; Threshold current;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.669229

Filename

669229