DocumentCode :
1367310
Title :
The DEPFET pixel BIOSCOPE
Author :
Neeser, W. ; Böcker, M. ; Buchholz, P. ; Fischer, P. ; Holl, P. ; Kemmer, J. ; Klein, P. ; Koch, H. ; Löcker, M. ; Lutz, G. ; Matthäy, H. ; Strüder, L. ; Trimp, M. ; Ulrici, J. ; Wermes, N.
Author_Institution :
Phys. Inst., Bonn Univ., Germany
Volume :
47
Issue :
3
fYear :
2000
fDate :
6/1/2000 12:00:00 AM
Firstpage :
1246
Lastpage :
1250
Abstract :
The DEPFET pixel Bioscope system based on a DEPFET pixel matrix provides good spatial and energy resolution in real-time digital autoradiography. Due to its very low noise and a thin entrance window the online detection of tritium without vacuum or cooling is demonstrated for the first time. To achieve this milestone a p-channel junction field effect transistor on a fully depleted high ohmic silicon substrate (DEPFET) is used as unit cell for pixel detectors providing an excellent noise performance of 158 eV FWHM at 6 keV (12 e ENC) at room temperature (300 K). 64×64 DEPFET pixel matrices with square (50 μm×50 μm) or hexagonal (50 μm×42 μm) pixels have been developed and operated successfully. First measurements result in a homogeneous charge collection efficiency on the whole matrix area and a good linearity in the X-ray range from 5 keV to 60 keV. First images taken with the square and the hexagonal pixel matrices using an 55 Fe-source as well as a `proof of principle´ experiment for online 3H-detection are presented and discussed
Keywords :
biological techniques; field effect transistors; radioisotope imaging; 158 eV; 300 K; 42 mum; 50 mum; 6 keV; 55Fe-source; DEPFET pixel BIOSCOPE; Fe; H; Si; X-ray range; biological samples; biophysical research instrumentation; energy resolution; fully depleted high ohmic silicon substrate; hexagonal pixel matrix; homogeneous charge collection efficiency; online 3H-detection; p-channel junction field effect transistor; pixel detectors cell; real-time digital autoradiography; spatial resolution; thin entrance window; Area measurement; Charge measurement; Cooling; Current measurement; Detectors; Energy resolution; FETs; Real time systems; Silicon; Temperature;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.856581
Filename :
856581
Link To Document :
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