Author :
Takahashi, Junji ; Bellwied, R. ; Beuttenmueller, R. ; Chen, W. ; Dezillie, B. ; Eremin, V. ; Elliot, D. ; Hoffmann, G.W. ; Huang, W. ; Humanic, T. ; Ilyashenko, I. ; Kotov, I.V. ; Kuczewski, P. ; Leonhardt, W. ; Li, Z. ; Lynn, D. ; Pandey, S.U. ; Schamba
Abstract :
Large (6.3×6.3 cm2) linear Silicon Drift Detectors were developed for use in the SVT, the inner tracking detector of the STAR experiment at the RHIC Collider. The concern of this paper is to estimate the effects of neutron and proton radiation damage to these devices and associated electronics. Detectors and their associated electronics were irradiated with 1011-1012/cm2, 1 MeV equivalent neutrons and 1010-1012/cm2, 24 GeV protons. I-V and C-V characteristics of diode test structures were used to determine depletion voltages, lifetimes, and reverse bias values. Measurements of the voltage and drift linearity with laser injection show the effects of irradiation on the detector performance. Measurements of noise levels show the effects of irradiation on the front-end electronics
Keywords :
neutron effects; nuclear electronics; proton effects; silicon radiation detectors; RHIC Collider; STAR silicon drift detectors; SVT; Si; depletion voltages; diode test structures; drift linearity; front-end electronics; inner tracking detector; lifetimes; neutron radiation damage; proton radiation damage; radiation damage studies; reverse bias values; Capacitance-voltage characteristics; Diodes; Laser noise; Life testing; Linearity; Neutrons; Protons; Radiation detectors; Silicon radiation detectors; Voltage measurement;
