Radiation damage studies with STAR silicon drift detectors

Author

Takahashi, Junji ; Bellwied, R. ; Beuttenmueller, R. ; Chen, W. ; Dezillie, B. ; Eremin, V. ; Elliot, D. ; Hoffmann, G.W. ; Huang, W. ; Humanic, T. ; Ilyashenko, I. ; Kotov, I.V. ; Kuczewski, P. ; Leonhardt, W. ; Li, Z. ; Lynn, D. ; Pandey, S.U. ; Schamba

Author_Institution

Sao Paulo Univ., Brazil

Volume

47

Issue

3

fYear

2000

fDate

6/1/2000 12:00:00 AM

Firstpage

903

Lastpage

907

Abstract

Large (6.3×6.3 cm²) linear Silicon Drift Detectors were developed for use in the SVT, the inner tracking detector of the STAR experiment at the RHIC Collider. The concern of this paper is to estimate the effects of neutron and proton radiation damage to these devices and associated electronics. Detectors and their associated electronics were irradiated with 10¹¹-10¹²/cm², 1 MeV equivalent neutrons and 10¹⁰-10¹²/cm², 24 GeV protons. I-V and C-V characteristics of diode test structures were used to determine depletion voltages, lifetimes, and reverse bias values. Measurements of the voltage and drift linearity with laser injection show the effects of irradiation on the detector performance. Measurements of noise levels show the effects of irradiation on the front-end electronics

Keywords

neutron effects; nuclear electronics; proton effects; silicon radiation detectors; RHIC Collider; STAR silicon drift detectors; SVT; Si; depletion voltages; diode test structures; drift linearity; front-end electronics; inner tracking detector; lifetimes; neutron radiation damage; proton radiation damage; radiation damage studies; reverse bias values; Capacitance-voltage characteristics; Diodes; Laser noise; Life testing; Linearity; Neutrons; Protons; Radiation detectors; Silicon radiation detectors; Voltage measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.856715

Filename

856715