100-GHz resonant cavity enhanced Schottky photodiodes

Author

Onat, B.M. ; Gökkavas, M. ; Özbay, E. ; Ata, E.P. ; Towe, E. ; Ünlü, M.S.

Author_Institution

Dept. of Electr. & Comput. Eng., Boston Univ., MA, USA

Volume

10

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

707

Lastpage

709

Abstract

Resonant cavity enhanced (RCE) photodiodes are promising candidates for applications in optical communications and interconnects where ultrafast high-efficiency detection is desirable. We have designed and fabricated RCE Schottky photodiodes in the (Al,In)GaAs material system for 900-nm wavelength. The observed temporal response with 10-ps pulsewidth was limited by the measurement setup and a conservative estimation of the bandwidth corresponds to more than 100 GHz. A direct comparison of RCE versus conventional detector performance was performed by high speed measurements under optical excitation at resonant wavelength (895 nm) and at 840 nm where the device functions as a single-pass conventional photodiode. A more than two-fold bandwidth enhancement with the RCE detection scheme was demonstrated.

Keywords

III-V semiconductors; Schottky diodes; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical resonators; photodetectors; photodiodes; 10 ps; 100 GHz; 900 nm; AlInGaAs; bandwidth; high speed measurement; optical communication; optical interconnect; resonant cavity enhanced Schottky photodiode; temporal response; ultrafast high-efficiency detection; Bandwidth; Optical fiber communication; Optical materials; Optical pulses; Performance evaluation; Photodiodes; Pulse measurements; Resonance; Space vector pulse width modulation; Wavelength measurement;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.669338

Filename

669338