20-Gb/s 14-k/spl Omega/ transimpedance long-wavelength MSM-HEMT photoreceiver OEIC

Author

Lao, Z. ; Hurm, V. ; Bronner, W. ; Hulsmann, A. ; Jakobus, T. ; Kohler, K. ; Ludwig, M. ; Raynor, B. ; Rosenzweig, J. ; Schlechtweg, M. ; Thiede, A.

Author_Institution

Fraunhofer-Inst. of Appl. Solid State Phys., Freiburg, Germany

Volume

10

Issue

5

fYear

1998

fDate

5/1/1998 12:00:00 AM

Firstpage

710

Lastpage

712

Abstract

A fully monolithically integrated photoreceiver composed of a metal-semiconductor-metal (MSM) photodetector, a transimpedance amplifier and three limiting amplifier stages for high-speed optical-fiber links is presented. The IC was fabricated using a 0.2-μm gatelength high-electron mobility transistor (HEMT) technology with a f_T of 60 GHz. The 1.3-1.55-μm wavelength photoreceiver optoelectronic integrated circuit (OEIC) has a bandwidth of 16 GHz with a high-transimpedance gain of 14 k/spl Omega/. Eye diagrams were demonstrated at 20 Gb/s with a output voltage of 1 V/sub p-p/.

Keywords

HEMT integrated circuits; integrated optoelectronics; metal-semiconductor-metal structures; optical receivers; 0.2 micron; 1 V; 1.3 to 1.55 micron; 14 kohm; 16 GHz; 20 Gbit/s; 60 GHz; bandwidth; eye diagram; gain; high electron mobility transistor; high-speed optical fiber link; limiting amplifier; long-wavelength MSM-HEMT photoreceiver OEIC; metal-semiconductor-metal photodetector; monolithic integration; optoelectronic integrated circuit; transimpedance amplifier; HEMTs; High speed optical techniques; Integrated circuit technology; Integrated optics; MODFETs; Optical amplifiers; Optoelectronic devices; Photodetectors; Semiconductor optical amplifiers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.669340

Filename

669340