A novel simple IGBT model for power electronic systems EMI simulation

Insulated Gate Bipolar Transistors (IGBTs) have been widely used in power electronic systems, such as switched mode power supplies, electric vehicles´ motor drives and so on. However, the high switching speed of the IGBT causes high levels of electromagnetic interference (EMI). This paper suggests a simple model with sufficient accuracy to predict the power electronics systems EMI levels. The predicted spectra of both voltage and current match the measurement results. Using the system time-domain simulation with the suggested model, the relationship between the layout of the converter and the EMI level is analyzed.