Title :
High efficiency monolithic gallium nitride distributed amplifier
Author :
Green, Bruce M. ; Lee, Sungjae ; Chu, Kenneth ; Webb, Kevin J. ; Eastman, Lester F.
Author_Institution :
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fDate :
7/1/2000 12:00:00 AM
Abstract :
The first gallium-nitride monolithic distributed amplifier is demonstrated. A nonuniform design allows the removal of the drain line dummy load with a concomitant increase in efficiency, An optimized nonuniform design shows a 10% increase in efficiency over an optimized uniform design having the dummy termination
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; circuit optimisation; distributed amplifiers; field effect MMIC; gallium compounds; integrated circuit design; wide band gap semiconductors; wideband amplifiers; GaN; GaN MMIC; high efficiency amplifier; monolithic distributed amplifier; optimized nonuniform design; Coplanar waveguides; Design optimization; Distributed amplifiers; Gallium nitride; HEMTs; III-V semiconductor materials; MMICs; Power transmission lines; Substrates; Thermal conductivity;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
