DocumentCode
1367713
Title
High efficiency monolithic gallium nitride distributed amplifier
Author
Green, Bruce M. ; Lee, Sungjae ; Chu, Kenneth ; Webb, Kevin J. ; Eastman, Lester F.
Author_Institution
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
Volume
10
Issue
7
fYear
2000
fDate
7/1/2000 12:00:00 AM
Firstpage
270
Lastpage
272
Abstract
The first gallium-nitride monolithic distributed amplifier is demonstrated. A nonuniform design allows the removal of the drain line dummy load with a concomitant increase in efficiency, An optimized nonuniform design shows a 10% increase in efficiency over an optimized uniform design having the dummy termination
Keywords
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; circuit optimisation; distributed amplifiers; field effect MMIC; gallium compounds; integrated circuit design; wide band gap semiconductors; wideband amplifiers; GaN; GaN MMIC; high efficiency amplifier; monolithic distributed amplifier; optimized nonuniform design; Coplanar waveguides; Design optimization; Distributed amplifiers; Gallium nitride; HEMTs; III-V semiconductor materials; MMICs; Power transmission lines; Substrates; Thermal conductivity;
fLanguage
English
Journal_Title
Microwave and Guided Wave Letters, IEEE
Publisher
ieee
ISSN
1051-8207
Type
jour
DOI
10.1109/75.856985
Filename
856985
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